FQP20N06 Datasheet | Fairchild Semiconductor

May 2001 QFET 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. Features - - - - - - - 20A, 60V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 11.5 n C) Low Crss ( typical 25 p F) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating ! " G! DS ! " " " TO-220 FQP...