FQP19N20 Fairchild Semiconductor 200V N-Channel MOSFET

Fairchild Semiconductor
Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correctio...
• 19.4 A, 200 V, RDS(on) = 150 mΩ (Max.) @ VGS = 10 V, ID = 9.7 A
• Low Gate Charge (Typ. 31 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = ...

Datasheet PDF File FQP19N20 Datasheet 668.32KB

FQP19N20   FQP19N20   FQP19N20  

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