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FQP19N20 - 200V N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FQP19N20
Manufacturer: Fairchild Semiconductor
File Size: 668.32 KB
Datasheet: FQP19N20_FairchildSemiconductor.pdf
Description: 200V N-Channel MOSFET

FQP19N20 Product details

Description

This N-Channel enhancement mode power.

Features

19.4 A, 200 V, RDS(on) = 150 mΩ (Max. ) @ VGS = 10 V, ID = 9.7 A.
Low Gate Charge (Typ. 31 nC).
Low Crss (Typ. 30 pF).
100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanch.

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200V N-Channel MOSFET Fairchild Semiconductor

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