Title | |
Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correctio... |
Features |
• 19.4 A, 200 V, RDS(on) = 150 mΩ (Max.) @ VGS = 10 V, ID = 9.7 A • Low Gate Charge (Typ. 31 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = ... |
Datasheet | FQP19N20 Datasheet - 668.32KB |
Distributor |
element14 Asia-Pacific |
Stock | 0 In stock |
Price |
500 units: 1582 KRW 100 units: 1887 KRW 10 units: 2282 KRW 1 units: 2722 KRW
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BuyNow | BuyNow - Manufacturer a onsemi FQP19N20 |
Distributor | Stock | Price | BuyNow |
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element14 Asia-Pacific |
500 units: 1582 KRW 100 units: 1887 KRW 10 units: 2282 KRW 1 units: 2722 KRW |
BuyNow |
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DigiKey |
1000 units: 1140.746 KRW |
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Rochester Electronics |
1000 units: 0.7301 USD 500 units: 0.7731 USD 100 units: 0.8075 USD 25 units: 0.8418 USD 1 units: 0.859 USD |
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Quest Components |
292 units: 0.9546 USD 133 units: 1.032 USD 1 units: 2.064 USD |
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ComSIT Asia |
No price available |
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Avnet Americas |
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Avnet Silica |
No price available |
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Bristol Electronics |
No price available |
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EBV Elektronik |
No price available |
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