FQP17N40
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 16 A, 400 V, RDS(on) = 270 mΩ (Max) @VGS = 10 V, ID = 8.0 A
- Low Gate Charge (Typ. 45 nC)
- Low Crss (Typ. 30 pF)
- 2 µ !"
