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FQP13N50CF Fairchild Semiconductor N-Channel MOSFET

Fairchild Semiconductor
Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode...
Features
• 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V
• Low gate charge (typical 43 nC)
• Low Crss (typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 100ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar strip...

Datasheet PDF File FQP13N50CF Datasheet 500.00KB

FQP13N50CF   FQP13N50CF   FQP13N50CF  




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