FQP13N50CF Overview
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V
- Low gate charge (typical 43 nC)
- Low Crss (typical 20pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Fast recovery body diode (typical 100ns) TM
