| Title | N채널 500V 13A(Tc) 195W(Tc) 스루홀 TO-220-3 |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode... |
| Features |
• 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 20pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 100ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar strip... |
| Datasheet |
 FQP13N50CF Datasheet - 500.00KB |
| Distributor |
DigiKey |
| Stock | 0 In stock |
| Price |
No price available
|
| BuyNow |
 BuyNow - Manufacturer a onsemi FQP13N50C_F105
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
No price available |
BuyNow |
