FQP13N50CF
Features
- 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V
- Low gate charge (typical 43 n C)
- Low Crss (typical 20p F)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Fast recovery body diode (typical 100ns)
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
G G DS
TO-220
FDP Series
GD S
TO-220F
FQPF Series
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C) Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current...
