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FQP13N50CF - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V.
  • Low gate charge (typical 43 nC).
  • Low Crss (typical 20pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Fast recovery body diode (typical 100ns) TM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET May 2006 FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features • 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 20pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 100ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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