Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 12 A, 600 V, RDS(on) = 650 mΩ (Max. ) @ VGS = 10 V, ID = 6 A.
- Low Gate Charge (Typ. 48 nC).
- Low Crss (Typ. 21 pF).
- 100% Avalanche Tested
D
GDS TO-220
Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol
Parameter
VDSS ID
IDM
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) -.
FQP12N60C Datasheet
