FQP12N60C - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQP12N60C
Manufacturer	Fairchild ↗ Semiconductor
File Size	1.70 MB
Description	N-Channel MOSFET
Datasheet	FQP12N60C_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

12 A, 600 V, RDS(on) = 650 mΩ (Max. ) @ VGS = 10 V, ID = 6 A.
Low Gate Charge (Typ. 48 nC).
Low Crss (Typ. 21 pF).
100% Avalanche Tested D GDS TO-220 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) -.

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Published: Apr 1, 2005 |