* 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @VGS = 10 V, ID = 2.1 A
* Low Gate Charge (Typ. 15 nC)
* Low Crss (Typ. 6.5 pF)
* 100% Avalanche Tested Descriptio.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.

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