Datasheet Details
| Part number | FQI44N08 |
|---|---|
| Manufacturer | Fairchild (onsemi) |
| File Size | 673.81 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet |
 FQI44N08 Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 44A, 80V, RDS(on) = 0.034Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (.