FQH8N100C mosfet equivalent, mosfet.
* 8 A, 1000 V, RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V
* Low Gate Charge (Typ. 53 nC)
* Low Crss (Typ. 16 pF)
* Fast Switching
* 100% Avalanche Tested
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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