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FQD8P10TM_F085 Datasheet, Fairchild Semiconductor

FQD8P10TM_F085 mosfet equivalent, 100v p-channel mosfet.

FQD8P10TM_F085 Avg. rating / M : 1.0 rating-11

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FQD8P10TM_F085 Datasheet

Features and benefits


* -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V
* Low gate charge ( typical 12 nC)
* Low Crss ( typical 30 pF)
* Fast switching
* 100% avalanche tested <.

Application

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features
* -6.6A, -100V,.

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

Image gallery

FQD8P10TM_F085 Page 1 FQD8P10TM_F085 Page 2 FQD8P10TM_F085 Page 3

TAGS

FQD8P10TM_F085
100V
P-Channel
MOSFET
FQD8P10TM-F085
FQD8P10
FQD8N25
Fairchild Semiconductor

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