FQD6N60C Key Features
- 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V
- Low gate charge ( typical 16 nC )
- Low Crss ( typical 7 pF)
- Fast switching
- 100 % avalanche tested
- Improved dv/dt capability
- Part: FQD6N60C
- Description: 600V N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 703.63 KB
Related Fairchild Semiconductor Datasheets
| Part Number | Description |
|---|---|
| FQD6N15 | 150V N-Channel MOSFET |
| FQD6N25 | 250V N-Channel MOSFET |
| FQD6N40 | 400V N-Channel MOSFET |
| FQD6N40C | 400V N-Channel MOSFET |
| FQD6N50C | N-Channel enhancement mode power field effect transistors |