Datasheet4U Logo Datasheet4U.com

FQD6N60C - 600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V.
  • Low gate charge ( typical 16 nC ).
  • Low Crss ( typical 7 pF).
  • Fast switching.
  • 100 % avalanche tested www. DataSheet4U. com.
  • Improved dv/dt capability ®.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQD60N0 N-Channel MOSFET Oucan Semi
FQD60N07 60V N-Channel MOSFET Oucan Semi
FQD12N06 60V N-Channel MOSFET Oucan Semi
FQD12N20L N-Channel MOSFET ON Semiconductor
FQD12P10TM-F085 P-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FQD6N15 150V N-Channel MOSFET
FQD6N25 250V N-Channel MOSFET
FQD6N40 400V N-Channel MOSFET
FQD6N40C 400V N-Channel MOSFET
FQD6N50C N-Channel enhancement mode power field effect transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQD6N60C 600V N-Channel MOSFET QFET FQD6N60C 600V N-Channel MOSFET Features • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V • Low gate charge ( typical 16 nC ) • Low Crss ( typical 7 pF) • Fast switching • 100 % avalanche tested www.DataSheet4U.com • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.