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Fairchild Semiconductor Electronic Components Datasheet

FQD6N60C Datasheet

600V N-Channel MOSFET

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FQD6N60C
600V N-Channel MOSFET
Features
• 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V
• Low gate charge ( typical 16 nC )
• Low Crss ( typical 7 pF)
• Fast switching
• 100 % avalanche tested
www.DataSIhmeperot4vUed.cdovm/dt capability
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
D
GS
D-PAK
FQD Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
G!
D
!
◀▲
!
S
FQD6N60C
600
4
2.4
16
± 30
300
4.0
8.0
4.5
80
0.78
-55 to +150
300
Typ
--
--
--
Max
1.56
50
110
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FQD6N60C Rev. A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FQD6N60C Datasheet

600V N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Device Marking
FQD6N60C
FQD6N60C
Device
FQD6N60CTM
FQD6N60CTF
Package
DPAK
DPAK
Reel Size
380mm
380mm
Tape Width
16mm
16mm
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ.
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
www.DataIGSShSeFet4U.comGate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.0 A
VDS = 40 V, ID = 2.0 A
2.0
--
(Note 4)
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 5.5 A,
RG = 25
VDS = 480 V, ID = 5.5 A,
VGS = 10 V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
--
0.6
--
--
--
--
--
1.7
4.8
620
65
7
15
45
45
45
16
3.5
6.5
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 4.0 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 5.5 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 34.3 mH, IAS = 4.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 4.0 A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
(Note 4)
--
--
--
--
--
--
--
--
310
2.1
Quantity
2500
2000
Max. Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
2.0
-- S
810 pF
85 pF
10 pF
40 ns
100 ns
100 ns
100 ns
20 nC
-- nC
-- nC
4.0 A
16 A
1.4 V
-- ns
-- µC
FQD6N60C Rev. A
2 www.fairchildsemi.com


Part Number FQD6N60C
Description 600V N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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