FQD6N60C mosfet equivalent, 600v n-channel mosfet.
* 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V
* Low gate charge ( typical 16 nC )
* Low Crss ( typical 7 pF)
* Fast switching
* 100 % avalanche tested ww.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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