FQD3N60C Datasheet | Fairchild Semiconductor

600V N-Channel MOSFET Features - 2.4A, 600V, RDS(on) = 3.4Ω @VGS = 10 V - Low gate charge ( typical 10.5 nC) - Low Crss ( typical 5 pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability January 2006 QFET TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor...