900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Fairchild Semiconductor Electronic Components Datasheet

FQD2N80 Datasheet

800V N-Channel MOSFET

No Preview Available !

FQD2N80 / FQU2N80
800V N-Channel MOSFET
September 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 1.8A, 800V, RDS(on) = 6.3@VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
D
!
"
35
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
FQD2N80 / FQU2N80
800
1.8
1.14
7.2
± 30
180
1.8
5.0
4.0
2.5
50
0.4
-55 to +150
300
Typ Max
-- 2.5
-- 50
-- 110
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A, September 2000


Fairchild Semiconductor Electronic Components Datasheet

FQD2N80 Datasheet

800V N-Channel MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
800
--
--
--
--
--
--
0.9
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 0.9 A
VDS = 50 V, ID = 0.9 A (Note 4)
3.0
--
--
--
4.9
2.4
5.0
6.3
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 425 550
-- 45
60
-- 5.5 7.0
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 400 V, ID = 2.4 A,
RG = 25
(Note 4, 5)
VDS = 640 V, ID = 2.4 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
12
30
25
28
12
2.6
6.0
35
70
60
65
15
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 1.8
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 7.2
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.8 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.4 A,
-- 480
dIF / dt = 100 A/µs
(Note 4)
--
2.0
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 105mH, IAS = 1.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 2.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A, September 2000


Part Number FQD2N80
Description 800V N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 9 Pages
PDF Download

FQD2N80 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 FQD2N80 800V N-Channel MOSFET
Fairchild Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy