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Fairchild Semiconductor Electronic Components Datasheet

FQD19N10 Datasheet

N-Channel MOSFET

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FQD19N10
N-Channel QFET® MOSFET
100 V, 15.6 A, 100 mΩ
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
• 15.6 A, 100 V, RDS(on) = 100 m(Max.) @ VGS = 10 V,
ID = 7.8 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss (Typ. 32 pF)
• 100% Avalanche Tested
D
G
S
D
D-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
FQD19N10TM
100
15.6
9.8
62.4
25
220
15.6
5.0
6.0
2.5
50
0.4
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQD19N10TM
2.5
110
50
Unit
oC/W
©2007 Fairchild Semiconductor Corporation
FQD19N10 Rev. C1
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FQD19N10 Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Part Number
FQD19N10TM
Top Mark
FQD19N10
Package
D-PAK
Packing Method Reel Size
Tape and Reel 330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 A
ID = 250 A, Referenced to 25°C
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 125°C
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 A
VGS = 10 V, ID = 7.8 A
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 7.8 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 50 V, ID = 19 A,
RG = 25
VDS = 80 V, ID = 19 A,
VGS = 10 V
(Note 4)
(Note 4)
Min.
100
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
0.1
--
--
--
--
--
0.078
11
600
165
32
7.5
150
20
65
19
3.9
9.0
Max.
--
--
1
10
100
-100
4.0
0.1
--
780
215
40
25
310
50
140
25
--
--
Unit
V
V/°C
A
A
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 15.6 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 19 A,
dIF / dt = 100 A/s

1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 1.35 mH, IAS = 15.6 A, VDD = 25 V, RG = 25 , starting TJ = 25oC.
3. ISD 19 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
-- -- 15.6 A
-- -- 62.4 A
-- -- 1.5
V
-- 78
--
ns
-- 200
--
nC
©2007 Fairchild Semiconductor Corporation
FQD19N10 Rev. C1
2
www.fairchildsemi.com


Part Number FQD19N10
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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