FQD17N08 Datasheet | Fairchild Semiconductor

FQD17N08 / FQU17N08 January 2001 QFET FQD17N08 / FQU17N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. Features - - - - - - 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 n C) Low Crss ( typical 28 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! " G! G S ! " " " D-PAK FQD Series I-PAK FQU...