FQD12P10TM_F085
Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Key Features
- 9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V
- Low gate charge ( typical 21 nC)
- Low Crss ( typical 65 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Qualified to AEC Q101
- RoHS compliant tm DD G S D-PAK
