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FQB8N90C Datasheet, Fairchild Semiconductor

FQB8N90C mosfet equivalent, n-channel mosfet.

FQB8N90C Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 447.07KB)

FQB8N90C Datasheet
FQB8N90C
Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 447.07KB)

FQB8N90C Datasheet

Features and benefits


* 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V
* Low Gate Charge (Typ. 35 nC)
* Low Crss (Typ. 12 pF)
* Fast Switching
* 100% Avalanche Tested

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

Image gallery

FQB8N90C Page 1 FQB8N90C Page 2 FQB8N90C Page 3

TAGS

FQB8N90C
N-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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