FQB8N90C mosfet equivalent, n-channel mosfet.
* 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V
* Low Gate Charge (Typ. 35 nC)
* Low Crss (Typ. 12 pF)
* Fast Switching
* 100% Avalanche Tested
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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