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FQB19N20 - 200V N-Channel MOSFET

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 19.4 A, 200 V, RDS(on) = 150 mΩ (Max. ) @ VGS = 10 V, ID = 9.7 A.
  • Low Gate Charge (Typ. 31 nC).
  • Low Crss (Typ. 30 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.  , 6 6 , < 6 < !$ 8         ,             2. .
  • /74   2. '+.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQB19N20 — N-Channel QFET® MOSFET FQB19N20 N-Channel QFET® MOSFET 200 V, 19.4 A, 150 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 19.4 A, 200 V, RDS(on) = 150 mΩ (Max.) @ VGS = 10 V, ID = 9.7 A • Low Gate Charge (Typ. 31 nC) • Low Crss (Typ.