Datasheet Details
| Part number | FQB13N10 |
|---|---|
| Manufacturer | Fairchild (onsemi) |
| File Size | 627.51 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 FQB13N10 Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V.
- Low gate charge ( typical 12 nC).
- Low Crss ( typical 20 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability.
- 175°C maximum junction temperature rating D GS D2-PAK FQB Series GDS I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continu.