FQAF8N80 - 800V N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQAF8N80
Manufacturer	Fairchild Semiconductor
File Size	690.58 KB
Description	800V N-Channel MOSFET
Datasheet	FQAF8N80 Datasheet
Additional preview pages of the FQAF8N80 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

5.9A, 800V, RDS(on) = 1.2Ω @VGS = 10 V.
Low gate charge ( typical 44 nC).
Low Crss ( typical 20 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability G DS TO-3PF FQAF Series G! D !.
◀▲.
! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) D.

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Published: Apr 1, 2005 |