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FQAF8N80 800V N-Channel MOSFET

FQAF8N80 Description

FQAF8N80 FQAF8N80 800V N-Channel MOSFET March 2001 QFET TM General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQAF8N80 Features

* 5.9A, 800V, RDS(on) = 1.2Ω @VGS = 10 V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 20 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability G DS TO-3PF FQAF Series G! D !
* ◀▲
* ! S Absolute Maximum R

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