FQAF22P10
Overview
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- -16.6A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typically 40 nC) Low Crss ( typically 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
- S TO-3PF FQAF Series S
