FQAF22P10 - 100V P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQAF22P10
Manufacturer	Fairchild Semiconductor
File Size	629.05 KB
Description	100V P-Channel MOSFET
Datasheet	FQAF22P10 Datasheet
Additional preview pages of the FQAF22P10 datasheet.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

-16.6A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typically 40 nC) Low Crss ( typically 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G G D S TO-3PF FQAF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain C.

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Published: Apr 1, 2005 |