FQA9N90_F109 Datasheet PDF - Fairchild Semiconductor N-Channel QFET MOSFET Specs

FQA9N90_F109 - N-Channel QFET MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

8.6 A, 900 V, RDS(on) = 1.3 Ω (Max. ) @ VGS = 10 V, ID = 4.3 A.
Low Gate Charge (Typ. 55 nC).
Low Crss (Typ. 25 pF).
100% Avalanche Tested.
RoHS Compliant.

Datasheet Details

Part number	FQA9N90_F109
Manufacturer	Fairchild Semiconductor
File Size	1.99 MB
Description	N-Channel QFET MOSFET
Datasheet	FQA9N90_F109 Datasheet
Additional preview pages of the FQA9N90_F109 datasheet.

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Full PDF Text Transcription

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FQA9N90_F109 — N-Channel QFET® MOSFET FQA9N90_F109 N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω May 2014 Features • 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max.) @ VGS = 10 V, ID = 4.3 A • Low Gate Charge (Typ. 55 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Published: Oct 18, 2015 |