FQA9N90_F109
Overview
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
- 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max.) @ VGS = 10 V, ID = 4.3 A
- Low Gate Charge (Typ. 55 nC)
- Low Crss (Typ. 25 pF)
- 100% Avalanche Tested
- RoHS Compliant
