FQA9N90C_F109 mosfet equivalent, mosfet.
* 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A
* Low Gate Charge (Typ. 45 nC)
* Low Crss . 14 pF)
* 100% Avalanche Tested
* RoHS compli.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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