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FQA9N90C_F109 - MOSFET

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 9 A, 900 V, RDS(on) = 1.4 Ω (Max. ) @ VGS = 10 V, ID = 4.5 A.
  • Low Gate Charge (Typ. 45 nC).
  • Low Crss . 14 pF).
  • 100% Avalanche Tested.
  • RoHS compliant April 2014.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQA9N90C_F109 — N-Channel QFET® MOSFET FQA9N90C_F109 N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω Features • 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 45 nC) • Low Crss . 14 pF) • 100% Avalanche Tested • RoHS compliant April 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G DS TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted.