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FQA9N90C_F109 Fairchild Semiconductor MOSFET

Fairchild Semiconductor
Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correctio...
Features
• 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A
• Low Gate Charge (Typ. 45 nC)
• Low Crss . 14 pF)
• 100% Avalanche Tested
• RoHS compliant April 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has ...

Datasheet PDF File FQA9N90C_F109 Datasheet 2.82MB

FQA9N90C_F109   FQA9N90C_F109   FQA9N90C_F109  




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