Datasheet4U Logo Datasheet4U.com

FQA90N15_F109 - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • RDS(on) = 18 mΩ (Max. ) @ VGS = 10 V, ID = 45 A.
  • Low Gate Charge (Typ. 220 nC).
  • Low Crss (Typ. 200 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Memperature Rating July 2015.

📥 Download Datasheet

Datasheet preview – FQA90N15_F109

Datasheet Details

Part number FQA90N15_F109
Manufacturer Fairchild Semiconductor
File Size 1.15 MB
Description N-Channel MOSFET
Datasheet download datasheet FQA90N15_F109 Datasheet
Additional preview pages of the FQA90N15_F109 datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQA90N15_F109 — N-Channel QFET® MOSFET FQA90N15_F109 N-Channel QFET® MOSFET 150 V, 90 A, 18 mΩ Features • RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A • Low Gate Charge (Typ. 220 nC) • Low Crss (Typ. 200 pF) • 100% Avalanche Tested • 175°C Maximum Junction Memperature Rating July 2015 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Published: |