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FQA90N08 - 80V N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 90 A, 80 V, RDS(on) = 16 mΩ (Max) @VGS = 10 V, ID = 45 A.
  • Low Gate Charge (Typ. 84 nC).
  • Low Crss (Typ. 200 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating D G D S TO-3PN G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Ga.

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Datasheet Details

Part number FQA90N08
Manufacturer Fairchild Semiconductor
File Size 2.30 MB
Description 80V N-Channel MOSFET
Datasheet download datasheet FQA90N08 Datasheet
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FQA90N08 — N-Channel QFET® MOSFET FQA90N08 N-Channel QFET® MOSFET 80 V, 90 A, 16 mΩ June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 90 A, 80 V, RDS(on) = 16 mΩ (Max) @VGS = 10 V, ID = 45 A • Low Gate Charge (Typ. 84 nC) • Low Crss (Typ.
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