FQA8N90C_F109 Datasheet | Fairchild Semiconductor

- N-Channel QFET® MOSFET N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω Features - 8 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 4 V - Low Gate Charge (Typ. 35 nC) - Low Crss (Typ. 12 pF) - 100% Avalanche Tested - RoHS pliant May 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...