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FQA8N90C_F109 - N-Channel QFET MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 8 A, 900 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V, ID = 4 V.
  • Low Gate Charge (Typ. 35 nC).
  • Low Crss (Typ. 12 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant May 2014.

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Datasheet Details

Part number FQA8N90C_F109
Manufacturer Fairchild Semiconductor
File Size 2.02 MB
Description N-Channel QFET MOSFET
Datasheet download datasheet FQA8N90C_F109 Datasheet
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FQA8N90C_F109 — N-Channel QFET® MOSFET FQA8N90C_F109 N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω Features • 8 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 4 V • Low Gate Charge (Typ. 35 nC) • Low Crss (Typ. 12 pF) • 100% Avalanche Tested • RoHS Compliant May 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G DS TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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