FQA8N90C_F109
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Key Features
- 8 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 4 V
- Low Gate Charge (Typ. 35 nC)
- Low Crss (Typ. 12 pF)
- 100% Avalanche Tested
- RoHS pliant May 2014
