FQA8N90C - 900V N-Channel MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	FQA8N90C
Manufacturer	Fairchild (now onsemi)
File Size	691.71 KB
Description	900V N-Channel MOSFET
Datasheet	FQA8N90C Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Overview

FQA8N90C QFET FQA8N90C 900V N-Channel MOSFET General.

Key Features

8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
◀ ▲.
G! TO-3P G DS FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain.

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