FQA8N80C_F109
Features
- 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V
- Low gate charge ( typical 35 n C)
- Low Crss ( typical 13p F)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Ro HS pliant
November 2007
QFET ®
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
G DS
TO-3PN
FQA Series
Absolute Maximum Ratings
Symbol
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
Parameter
Drain-Source Voltage
Drain Current Drain...
