| Title | |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode... |
| Features |
• 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V • Low gate charge ( typical 35 nC) • Low Crss ( typical 13pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant November 2007 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMO... |
| Datasheet |
 FQA8N80C_F109 Datasheet - 786.84KB |
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