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FQA8N100C - MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 1.45 Ω (Max. ) @ VGS = 10 V, ID = 4 A.
  • Low Gate Charge (Typ. 53 nC).
  • Low Crss (Typ. 16 pF).
  • 100% Avalanche Tested March 2014.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQA8N100C — N-Channel QFET® MOSFET FQA8N100C N-Channel QFET® MOSFET 1000 V, 8 A, 1.45 Ω Features • RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 53 nC) • Low Crss (Typ. 16 pF) • 100% Avalanche Tested March 2014 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies. D G D S TO-3PN G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.