FQA8N100C mosfet equivalent, mosfet.
* RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V, ID = 4 A
* Low Gate Charge (Typ. 53 nC)
* Low Crss (Typ. 16 pF)
* 100% Avalanche Tested
March 2014
Description
Th.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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