FQA8N100C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V, ID = 4 A
- Low Gate Charge (Typ. 53 nC)
- Low Crss (Typ. 16 pF)
- 100% Avalanche Tested March 2014
