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FQA6N90C_F109 - 900V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V.
  • Low gate charge ( typical 30 nC).
  • Low Crss ( typical 11pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant September 2007 QFET ®.

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Datasheet Details

Part number FQA6N90C_F109
Manufacturer Fairchild Semiconductor
File Size 791.23 KB
Description 900V N-Channel MOSFET
Datasheet download datasheet FQA6N90C_F109 Datasheet
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FQA6N90C_F109 900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET Features • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant September 2007 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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