FQA6N90C_F109 Overview
Key Specifications
Mount Type: Through Hole
Pins: 3
Height: 18.9 mm
Length: 15.8 mm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V
- Low gate charge ( typical 30 nC)
- Low Crss ( typical 11pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant September 2007 QFET ®
