FQA6N90C_F109 Datasheet | Fairchild Semiconductor

FQA6N90C_F109 900V N-Channel MOSFET 900V N-Channel MOSFET Features - 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V - Low gate charge ( typical 30 n C) - Low Crss ( typical 11p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant September 2007 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. G DS TO-3PN FQA...