Full PDF Text Transcription for FQA6N90C (Reference)
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S(on) = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11pF) Fast switching 100% avalanche tested Improved dv/dt capability September 2006 ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electr
FQA6N90C Datasheet
