FQA65N06
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
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- 72A, 60V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 48 n C) Low Crss ( typical 100 p F) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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G! G DS
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TO-3P
FQA Series
TC = 25°C unless otherwise noted
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
Parameter Drain-Source Voltage
- Continuous (TC = 25°C) Drain...
