FQA62N25C
Overview
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
- 62 A, 250 ID = 31 A V, RDS(on) = 35 mΩ (Max.) @ VGS = 10 V,
- Low Gate Charge (Typ. 100 nC)
- Low Crss (Typ. 63.5 pF)
- 100% Avalanche Tested
- G DS TO-3PN G S
