FQA62N25C mosfet equivalent, mosfet.
*
62 A, 250 ID = 31 A
V,
RDS(on)
=
35
mΩ
(Max.)
@
VGS
=
10
V,
* Low Gate Charge (Typ. 100 nC)
* Low Crss (Typ. 63.5 pF)
* 100% Avalanche T.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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