FQA55N10 - 100V N-Channel MOSFET

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Fairchild Semiconductor

Part number	FQA55N10
Manufacturer	Fairchild Semiconductor
File Size	661.60 KB
Description	100V N-Channel MOSFET
Datasheet	FQA55N10 Datasheet
Additional preview pages of the FQA55N10 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

61A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Dr.

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Published: Apr 1, 2005 |