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FQA38N30 - 300V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max. ) @ VGS = 10 V, ID = 19.2 A.
  • Low Gate Charge (Typ. 90 nC).
  • Low Crss (Typ. 70 pF).
  • 100% Avalanche Tested.
  • RoHS compliant August 2014.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ Features • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A • Low Gate Charge (Typ. 90 nC) • Low Crss (Typ. 70 pF) • 100% Avalanche Tested • RoHS compliant August 2014 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.