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FQA34N25 - 250V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • 34A, 250V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
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  • G! G DS TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) D.

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Datasheet Details

Part number FQA34N25
Manufacturer Fairchild Semiconductor
File Size 689.31 KB
Description 250V N-Channel MOSFET
Datasheet download datasheet FQA34N25 Datasheet
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FQA34N25 October 2001 FQA34N25 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. Features • • • • • • 34A, 250V, RDS(on) = 0.
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