FQA33N10 Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features - - - - - - - 36A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 n C) Low Crss ( typical 62 p F) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating ! " G! G DS ! " " " TO-3P FQA Series ! Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA33N10 100 36 25.5 144 ±25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m J A m J V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 430 36 16.3 6.0 163 1.09 -55 to +175 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -Max 0.92 -40 Units °CW °CW °CW ©2000 Fairchild Semiconductor International Rev. A, April 2000 Electrical Characteristics T Symbol Parameter = 25°C unless otherwise...