FQA19N20C
Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 21.8A, 200V, RDS(on) = 0.17Ω @VGS = 10 V
- Low gate charge ( typical 40.5 nC)
- Low Crss ( typical 85 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability G DS TO-3PN FQA Series D { G{
