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FQA17P10 - 100V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • -18A, -100V, RDS(on) = 0.19Ω @VGS = -10 V Low gate charge ( typical 30 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G TO-3P G DS FQA Series TC = 25°C unless otherwise noted S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Co.

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Datasheet Details

Part number FQA17P10
Manufacturer Fairchild Semiconductor
File Size 676.74 KB
Description 100V P-Channel MOSFET
Datasheet download datasheet FQA17P10 Datasheet
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FQA17P10 QFET FQA17P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. TM Features • • • • • • • -18A, -100V, RDS(on) = 0.
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