FQA13N80_F109 Datasheet, Fairchild Semiconductor

* 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 6.3 A
* Low Gate Charge (Typ. 68 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested D G DS .

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.