FQA13N80
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V
- Low gate charge ( typical 68 nC)
- Low Crss ( typical 30pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability September 2006 QFET ®
