FQA10N80 Datasheet 800V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

FQA10N80 800v n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FQA10N80
Manufacturer	Fairchild (now onsemi)
File Size	675.56 KB
Description	800V N-Channel MOSFET
Datasheet	FQA10N80 Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply.

Overview

FQA10N80 September 2000 QFET FQA10N80 800V N-Channel MOSFET General.

Key Features

9.8A, 800V, RDS(on) = 1.05Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS 3 " " 5 TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current.

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