Datasheet4U Logo Datasheet4U.com

FJY3010R - NPN Epitaxial Silicon Transistor

Key Features

  • Switching circuit, Inverter, Interface circuit, Driver Circuit.
  • Built in bias Resistor (R=10KΩ).
  • Complement to FJY4010R tm Eqivalent Circuit C C E S10 B E B SOT - 523F Absolute Maximum Ratings.
  • Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta = 25°C unless otherwise noted Parameter Value 40 40 www. DataSheet4U. com Units V V V mA °C °C mW 5 100 -55~150 150 200 TSTG TJ PC Storage Tempe.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Fairchild (onsemi)

Part Number Description
FJY3011R NPN Epitaxial Silicon Transistor
FJY3012R NPN Epitaxial Silicon Transistor
FJY3013R NPN Epitaxial Silicon Transistor
FJY3014R NPN Epitaxial Silicon Transistor
FJY3015R NPN Epitaxial Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FJY3010R NPN Epitaxial Silicon Transistor November 2006 FJY3010R NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=10KΩ) • Complement to FJY4010R tm Eqivalent Circuit C C E S10 B E B SOT - 523F Absolute Maximum Ratings * Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta = 25°C unless otherwise noted Parameter Value 40 40 www.DataSheet4U.com Units V V V mA °C °C mW 5 100 -55~150 150 200 TSTG TJ PC Storage Temperature Range Junction Temperature Collector Power Dissipation, by RθJA * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.