FJV4101R Datasheet | Fairchild Semiconductor

Switching Application (Bias Resistor Built In) - Switching circuit, Inverter, Interface circuit, Driver Circuit - Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) - plement to FJV3101R 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking R1 B R2 R 71 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -50 -10 -100 200 150 -55 ~ 150 Units V V V m A m W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO h FE VCE(sat) f T Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -10m A IC= -10m A, IB= -0.5m A VCE= -10V, IC=-5m A VCB= -10V, IE=0 f=1.0MHz VCE= -5V, IC= -100µA VCE= -0.3V, IC= -20m A 3.2 0.9 4.7 1 -0.5 -3 6.2 1.1 200 5.5 20 -0.3 V MHz p F V V KΩ Min. -50 -50 -0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 Typical Characteristics 1000 -100 VCE = - 5V R1 = 4.7 K R2 = 4.7 K VCE =- 0.3V R1 = 4.7 K R2 = 4.7 K h FE, DC CURRENT GAIN VI(on)[V], INPUT VOLTAGE -10 -1 10 -1 -10 -100 -1000 -0.1 -0.1 -1 -10 -100 IC[m A], COLLECTOR CURRENT IC[m A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Input On...