FJV3105R Datasheet | Fairchild Semiconductor

Switching Application (Bias Resistor Built In) - Switching circuit, Inverter, Interface circuit, Driver Circuit - Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) - plement to FJV4105R 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R25 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature R1 B R2 Value 50 50 10 100 200 150 -55 ~ 150 Units V V V m A m W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO h FE VCE(sat) Cob f T VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5m A IC=10m A, IB=0.5m A VCE=10V, IC=5m A f=1MHz VCE=10V, IC=5m A VCE=5V, IC=100µA VCE=0.3V, IC=20m A 3.2 0.42 4.7 0.47 0.3 2.5 6.2 0.52 3.7 250 30 0.3 V p F MHz V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 Typical Characteristics VCE = 5V R1 = 4.7K R2 = 10K VCE =0.3V R1 = 4.7K R2 = 10K VI (on)[V], INPUT VOLTAGE 1 10 100 h FE, DC CURRENT GAIN 1 0.1 0.1 0.1 IC[m A], COLLECTOR CURRENT IC[m A], COLLECTOR CURRENT Figure 1. DC current...