Datasheet4U Logo Datasheet4U.com

FGH20N6S2D - 600V/ SMPS II Series N-Channel IGBT

Description

The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS).

Features

  • 100kHz Operation at 390V, 7A.
  • 200kHZ Operation at 390V, 5A.
  • 600V Switching SOA Capability.
  • Typical Fall Time.
  • . 85ns at TJ = 125oC.
  • Low Gate Charge.
  • . . . . 30nC at VGE = 15V.
  • Low Plateau Voltage.
  • . . .6.5V Typical.
  • UIS Rated.
  • 100mJ.
  • Low Conduction Loss.
  • Low Eon.
  • Soft Recovery Diode IGBT (co-pack) formerly Developmental T.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FGH20N60SFDTU IGBT ON Semiconductor
FGH20N60SFDTU-F085 IGBT ON Semiconductor
FGH20N60UFD IGBT ON Semiconductor
FGH25N120FTDS IGBT ON Semiconductor
FGH25T120SMD IGBT ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FGH20N6S2 600V/ SMPS II Series N-Channel IGBT
FGH20N60SFD 20A Field Stop IGBT
FGH20N60SFDTU_F085 20A Field Stop IGBT
FGH20N60UFD 20A Field Stop IGBT
FGH25N120FTDS IGBT

Full PDF Text Transcription

Click to expand full text
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D July 2002 FGH20N6S2D / FGP20N6S2D / FGB20N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.
Published: |