Download FGB3440G2_F085 Datasheet PDF
Fairchild Semiconductor
FGB3440G2_F085
FGB3440G2_F085 is N-Channel Ignition IGBT manufactured by Fairchild Semiconductor.
Features - SCIS Energy = 335m J at TJ = 25o C - Logic Level Gate Drive Applications - Automotive lgnition Coil Driver Circuits - Coil On Plug Applications - Qualified to AEC Q101 - Ro HS pliant Package JEDEC TO-263AB D²-Pak JEDEC TO-220AB EC G Symbol JEDEC TO-252AA D-Pak GATE G COLLECTOR E (FLANGE) Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1m A) BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10m A) ESCIS25 Self Clamping Inductive Switching Energy (Note 1) ESCIS150 Self Clamping Inductive Switching Energy (Note 2) IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C VGEM Gate to Emitter Voltage Continuous Power Dissipation...