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Fairchild Semiconductor Electronic Components Datasheet

FGB3236_F085 Datasheet

N-Channel Ignition IGBT

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October 2013
FGB3236_F085 / FGI3236_F085
EcoSPARKŠ 320mJ, 360V, N-Channel Ignition IGBT
Features
„ Industry Standard D2-Pak package
„ SCIS Energy = 320mJ at TJ = 25oC
„ Logic Level Gate Drive
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Automotive lgnition Coil Driver Circuits
„ Coil On Plug Applications
Package
GATE
EMITTER
COLLECTOR
JEDEC TO-263AB
D2-Pak
E
G
COLLECTOR TO262AB
(FLANGE)
FDI SERIES
@2008 Fairchild Semiconductor Corporation
FGB3236_F085 / FGI3236_F085 Rev. A1
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FGB3236_F085 Datasheet

N-Channel Ignition IGBT

No Preview Available !

Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ESCIS25 Self Clamping Inductive Switching Energy (ISCIS = 14.7A, L = 3.0mHy, TJ = 25°C)
ESCIS150 Self Clamping Inductive Switching Energy (ISCIS = 10.4A, L = 3.0mHy, TJ = 150°C)
IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C
IC110
Collector Current Continuous, at VGE = 4.0V, TC = 110°C
VGEM Gate to Emitter Voltage Continuous
PD
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
TPKG Max. Lead Temp. for Soldering (Package Body for 10s)
ESD Electrostatic Discharge Voltage at100pF, 1500
Package Marking and Ordering Information
Ratings
360
24
320
160
44
27
±10
187
1.25
-40 to +175
-40 to +175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
Device Marking
FGB3236
FGI3236
Device
FGB3236_F085
FGI3236_F085
Package
TO263
TO262
Reel Size
330mm
Tube
Tape Width
24mm
NA
Quantity
800 units
50 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BVCER
BVCES
BVECS
BVGES
ICES
IECS
R1
R2
ICE = 2mA, VGE = 0,
Collector to Emitter Breakdown Voltage
RGE
TJ =
= 1K, See Fig.
-40 to 150oC
15
ICE = 10mA, VGE = 0V,
Collector to Emitter Breakdown Voltage
RGE
TJ =
= 0,
-40 to
150oC
Emitter to Collector Breakdown Voltage
ICE = -75mA, VGE = 0V,
TC = 25°C
Gate to Emitter Breakdown Voltage IGES = ±2mA
Collector to Emitter Leakage Current
VCES = 250V,
See Fig. 11
Emitter to Collector Leakage Current
VEC = 24V,
See Fig.11
Series Gate Resistance
Gate to Emitter Resistance
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V,
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V,
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V,
ICE(ON) Collector to Emitter On State Current VGE = 5V, VCE = 5V
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
TC=25oC,
See Fig. 3
TC = 150oC,
See Fig. 4
TC = 150oC
330 363 390 V
350 378 410 V
30 - - V
±12 ±14 -
V
- - 25 µA
- - 1 mA
-
-
-
-
1
40
mA
- 100 -
10K - 30K
- 1.14 1.4 V
- 1.32 1.7
- 1.61 2.05
50 -
-
V
V
A
FGB3236_F085 / FGI3236_F085 Rev. A1
2
www.fairchildsemi.com


Part Number FGB3236_F085
Description N-Channel Ignition IGBT
Maker Fairchild Semiconductor
Total Page 10 Pages
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