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FGB30N6S2D - 600V/ SMPS II Series N-Channel IGBT

Datasheet Summary

Description

The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS).

Features

  • 100kHz Operation at 390V, 14A.
  • 200kHZ Operation at 390V, 9A.
  • 600V Switching SOA Capability.
  • Typical Fall Time.
  • . 90ns at TJ = 125oC.
  • Low Gate Charge.
  • . . . . 23nC at VGE = 15V.
  • Low Plateau Voltage.
  • . . .6.5V Typical.
  • UIS Rated.
  • 150mJ.
  • Low Conduction Loss IGBT formerly Developmental Type TA49336 Diode formerly Developmental Type TA49390 Pa.

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Datasheet Details

Part number FGB30N6S2D
Manufacturer Fairchild Semiconductor
File Size 281.66 KB
Description 600V/ SMPS II Series N-Channel IGBT
Datasheet download datasheet FGB30N6S2D Datasheet
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FGH30N6S2D / FGP30N6S2D / FGB30N6S2D July 2001 FGH30N6S2D / FGP30N6S2D / FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.
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