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Fairchild Semiconductor Electronic Components Datasheet

FGB3040G2_F085 Datasheet

N-Channel Ignition IGBT

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May 2014
FGB3040G2_F085 / FGD3040G2_F085
FGP3040G2_F085 / FGI3040G2_F085
EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT
Features
„ SCIS Energy = 300mJ at TJ = 25oC
„ Logic Level Gate Drive
Applications
„ Automotive lgnition Coil Driver Circuits
„ Coil On Plug Applications
„ Qualified to AEC Q101
„ RoHS Compliant
Package
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
E CG
Symbol
G
E
JEDEC TO-252AA
D-Pak
JEDEC TO-262AA
EC
G
GATE
G
E
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ESCIS25 Self Clamping Inductive Switching Energy (Note 1)
ESCIS150 Self Clamping Inductive Switching Energy (Note 2)
IC25 Collector Current Continuous, at VGE = 5.0V, TC = 25°C
IC110 Collector Current Continuous, at VGE = 5.0V, TC = 110°C
VGEM Gate to Emitter Voltage Continuous
PD
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
TPKG Reflow soldering according to JESD020C
ESD
HBM-Electrostatic Discharge Voltage at100pF, 1500Ω
CDM-Electrostatic Discharge Voltage at 1Ω
@2014 Fairchild Semiconductor Corporation
FGx3040G2_F085 Rev.C4
1
COLLECTOR
R1
R2
EMITTER
Ratings
400
28
300
170
41
25.6
±10
150
1
-55 to +175
-55 to +175
300
260
4
2
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
kV
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FGB3040G2_F085 Datasheet

N-Channel Ignition IGBT

No Preview Available !

Package Marking and Ordering Information
Device Marking
FGB3040G2
FGD3040G2
FGP3040G2
FGI3040G2
Device
FGB3040G2_F085
FGD3040G2_F085
FGP3040G2_F085
FGI3040G2_F085
Package
TO-263AB
TO-252AA
TO-220AB
TO-262AA
Reel Size
330mm
330mm
Tube
Tube
Tape Width
24mm
16mm
N/A
N/A
Quantity
800
2500
50
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BVCER
BVCES
BVECS
BVGES
ICER
IECS
R1
R2
ICE = 2mA, VGE = 0,
Collector to Emitter Breakdown Voltage
RGE
TJ =
= 1KΩ,
-40 to 150oC
ICE = 10mA, VGE = 0V,
Collector to Emitter Breakdown Voltage
RGE
TJ =
= 0,
-40 to
150oC
Emitter to Collector Breakdown Voltage
ICE = -20mA, VGE = 0V,
TJ = 25°C
Gate to Emitter Breakdown Voltage IGES = ±2mA
Collector to Emitter Leakage Current VCE = 250V, RGE = 1K
Emitter to Collector Leakage Current VEC = 24V,
Series Gate Resistance
Gate to Emitter Resistance
TJ = 25oC
TJ = 150oC
TJ = 25oC
TJ = 150oC
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
ESCIS Self Clamped Inductive Switching
ICE = 6A, VGE = 4V,
ICE = 10A, VGE = 4.5V,
ICE = 15A, VGE = 4.5V,
L = 3.0 mHy,RG = 1K,
VGE = 5V, (Note 1)
TJ = 25oC
TJ = 150oC
TJ = 150oC
TJ = 25°C
370 400 430 V
390 420 450 V
28 - - V
±12 ±14 -
V
- - 25 μA
- - 1 mA
-
-
-
-
1
40
mA
- 120 -
Ω
10K - 30K Ω
- 1.15 1.25 V
- 1.35 1.50 V
- 1.68 1.85 V
- - 300 mJ
Thermal Characteristics
RθJC Thermal Resistance Junction to Case
- - 1 oC/W
Notes:
1: Self
Tj=25oC;
Clamping
L=3mHy,
IISnCdIuSc=t1iv4e.2SAw,VitcChCi=ng10E0nVerdguyri(nEgSiCnIdSu25c)toorf
300 mJ is based on the test conditions
charging and VCC=0V during the time
that starting
in clamp.
Tj=21: S50eolfCC;laLm=3pminHgyI,nIdSuCcISti=ve10S.8wAit,cVhCinCg=E10n0eVrgydu(ErinSgCISin1d5u0)ctoofr1c7h0amrgJinigs
based on the
and VCC=0V
test conditions that starting
during the time in clamp.
@2014 Fairchild Semiconductor Corporation
FGx3040G2_F085 Rev.C4
2
www.fairchildsemi.com


Part Number FGB3040G2_F085
Description N-Channel Ignition IGBT
Maker Fairchild Semiconductor
Total Page 10 Pages
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