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FGA60N65SMD — 650 V, 60 A Field Stop IGBT
October 2013
FGA60N65SMD
650 V, 60 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A • Fast Switching : EOFF = 7.5 uJ/A • Tighten Parameter Distribution • RoHS Compliant 175oC • Positive Temperature Co-efficient for Easy Parallel Operating
General Description
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.